IXXH40N65B4 Ixys, IXXH40N65B4 Datasheet - Page 6

• Manufacturer Part Number: IXXH40N65B4
• Description: IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH40N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.5 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 120 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 455 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
280
240
200
160
120
180
160
140
120
100
80
40
80
60
40
20
0
0
25
5
Fig. 18. Inductive Turn-on Switching Times vs.
Fig. 20. Inductive Turn-on Switching Times vs.
t
T
V
10
r i
J
CE
= 150ºC, V
= 400V
15
50
GE
20
t
= 15V
Junction Temperature
d(on)
T
J
Gate Resistance
I
- Degrees Centigrade
- - - -
C
I
25
75
I
C
= 40A
C
= 80A
R
= 80A
G
- Ohms
30
35
100
R
V
t
r i
G
CE
= 5
= 400V
Ω
40
, V
GE
125
45
= 15V
t
d(on)
I
C
= 40A
50
- - - -
55
150
140
120
100
80
60
40
20
0
40
38
36
34
32
30
28
26
24
22
120
100
80
60
40
20
0
20
t
R
V
25
Fig. 19. Inductive Turn-on Switching Times vs.
r i
G
CE
= 5
= 400V
Ω
30
, V
GE
35
= 15V
T
t
J
d(on)
= 25ºC
40
Collector Current
- - - -
45
I
C
50
- Amperes
IXXH40N65B4
55
T
J
= 150ºC
60
65
70
IXYS REF: IXX_40N65B4(E5) 01-09-13
75
80
45
40
35
30
25
20
15