SIHF12N60E-E3 Vishay/Siliconix, SIHF12N60E-E3 Datasheet - Page 3

• Manufacturer Part Number: SIHF12N60E-E3
• Description: MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHF12N60E-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Resistance Drain-source Rds (on): 380 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220FP-3
• Fall Time: 19 ns
• Forward Transconductance Gfs (max / Min): 3.8 S
• Gate Charge Qg: 29 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 147 W
• Rise Time: 19 ns

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S13-0059-Rev. D, 21-Jan-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
30
25
20
15
10
20
16
12
30
25
20
15
10
5
0
8
4
0
5
0
0
0
0
TOP 15 V
Fig. 3 - Typical Transfer Characteristics
TOP 15 V
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
T
J
14 V
13 V
12 V
11 V
10 V
= 150 °C
V
14 V
13 V
12 V
11 V
10 V
9 V
V
www.vishay.com
5
9 V
8 V
DS
5
V
GS
DS
5
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T
10
T
10
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
J
= 25 °C
= 150 °C
7 V
10
15
15
15
20
20
5 V
8 V
T
6 V
J
For technical questions, contact:
20
= 25 °C
25
25
6 V
5 V
7 V
30
30
25
3
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10 000
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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1000
Fig. 4 - Normalized On-Resistance vs. Temperature
100
2.5
1.5
0.5
10
24
20
16
12
3
2
1
0
1
8
4
0
- 60
0
0
I
www.vishay.com/doc?91000
D
- 40 - 20 0
= 6 A
C
C
100
V
10
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oss
DS
T
Q
J
, Drain-to-Source Voltage (V)
, Junction Temperature (°C)
g
, Total Gate Charge (nC)
200
20
C
20 40 60 80 100 120 140 160
iss
V
C
C
C
GS
iss
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V
V
V
300
30
DS
DS
DS
= 0 V, f = 1 MHz
= C
= C
= C
V
= 480 V
= 300 V
= 120 V
GS
gs
gd
ds
+ C
= 10 V
+ C
400
40
Vishay Siliconix
Document Number: 91481
SiHF12N60E
gd
gd
, C
ds
500
50
Shorted
600
60