SIHF12N60E-E3 Vishay/Siliconix, SIHF12N60E-E3 Datasheet - Page 4

• Manufacturer Part Number: SIHF12N60E-E3
• Description: MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHF12N60E-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Resistance Drain-source Rds (on): 380 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220FP-3
• Fall Time: 19 ns
• Forward Transconductance Gfs (max / Min): 3.8 S
• Gate Charge Qg: 29 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 147 W
• Rise Time: 19 ns

S13-0059-Rev. D, 21-Jan-13
Fig. 7 - Typical Source-Drain Diode Forward Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
100
0.01
100
0.1
0.1
10
10
* V
1
1
0.2
1
GS
Fig. 8 - Maximum Safe Operating Area
Operation in this Area
Limited by R
T
T
Single Pulse
C
J
> minimum V
0.01
0.4
= 150 °C
0.1
= 25 °C
T
www.vishay.com
1
J
0.0001
V
Limited by R
= 150 °C
V
SD
DS
0.05
0.02
, Source-Drain Voltage (V)
0.2
0.1
0.6
Duty Cycle = 0.5
, Drain-to-Source Voltage (V)
DS(on)
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Single Pulse
10
GS
0.8
DS(on)
at which R
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
*
BVDSS Limited
T
1.0
J
= 25 °C
0.001
100
1.2
DS(on)
I
DM
V
= Limited
For technical questions, contact:
GS
1.4
is specified
= 0 V
1.6
100 μs
10 ms
1000
1 ms
0.01
Pulse Time (s)
4
[e-mail]
Fig. 9 - Maximum Drain Current vs. Case Temperature
0.1
Fig. 10 - Temperature vs. Drain-to-Source Voltage
750
725
700
675
650
625
600
575
550
525
12
15
9
6
3
0
- 60
25
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- 40 - 20
T
50
J
T
, Junction Temperature (°C)
J
0
, Case Temperature (°C)
20 40 60 80 100 120 140
1
75
100
Vishay Siliconix
Document Number: 91481
SiHF12N60E
125
10
150
160