SIHF12N60E-E3 Vishay/Siliconix, SIHF12N60E-E3 Datasheet - Page 5

• Manufacturer Part Number: SIHF12N60E-E3
• Description: MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHF12N60E-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Resistance Drain-source Rds (on): 380 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220FP-3
• Fall Time: 19 ns
• Forward Transconductance Gfs (max / Min): 3.8 S
• Gate Charge Qg: 29 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 147 W
• Rise Time: 19 ns

S13-0059-Rev. D, 21-Jan-13
Vary t
required I
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
p
Fig. 14 - Unclamped Inductive Test Circuit
Fig. 15 - Unclamped Inductive Waveforms
to obtain
V
I
90 %
10 %
AS
AS
Fig. 12 - Switching Time Test Circuit
DS
V
Fig. 13 - Switching Time Waveforms
V
DS
GS
R
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
10 V
www.vishay.com
G
G
10 V
V
GS
t
V
d(on)
DS
V
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
DS
t
p
t
r
t
p
I
AS
D.U.T
D.U.T.
0.01 Ω
L
R
D
t
d(off)
V
DS
For technical questions, contact:
t
f
V
+
-
V
DD
DD
+
-
V
DD
5
[e-mail]
10 V
www.vishay.com/doc?91000
Fig. 16 - Basic Gate Charge Waveform
12 V
V
V
G
Fig. 17 - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
Q
0.2 µF
GS
Current sampling resistors
3 mA
50 kΩ
Charge
Q
0.3 µF
Q
GD
G
I
G
Vishay Siliconix
Document Number: 91481
SiHF12N60E
D.U.T.
I
D
+
-
V
DS