PMF170XP,115 NXP Semiconductors, PMF170XP,115 Datasheet - Page 10

• Manufacturer Part Number: PMF170XP,115
• Description: MOSFET P-CH -20 V -1 A
• Manufacturer: NXP Semiconductors

Specifications of PMF170XP,115

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 1 A
• Resistance Drain-source Rds (on): 200 mOhms
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Forward Transconductance Gfs (max / Min): 1.9 S
• Gate Charge Qg: 3.9 nC
• Power Dissipation: 290 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
9. Package outline
Fig 18. Package outline SOT323 (SC-70)
PMF170XP
Product data sheet
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT323
1.1
0.8
A
max
0.1
A 1
1
0.4
0.3
b p
y
IEC
e 1
0.25
0.10
c
D
e
b p
2.2
1.8
D
3
All information provided in this document is subject to legal disclaimers.
JEDEC
1.35
1.15
E
0
2
REFERENCES
Rev. 1 — 2 September 2011
1.3
e
w
B
M
0.65
B
e 1
JEITA
SC-70
scale
1
2.2
2.0
H E
A
0.45
0.15
L p
A 1
2 mm
0.23
0.13
Q
20 V, 1 A P-channel Trench MOSFET
H E
0.2
E
v
detail X
0.2
PROJECTION
w
EUROPEAN
L p
A
Q
PMF170XP
c
© NXP B.V. 2011. All rights reserved.
X
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT323
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