PMF170XP,115 NXP Semiconductors, PMF170XP,115 Datasheet - Page 9

• Manufacturer Part Number: PMF170XP,115
• Description: MOSFET P-CH -20 V -1 A
• Manufacturer: NXP Semiconductors

Specifications of PMF170XP,115

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 1 A
• Resistance Drain-source Rds (on): 200 mOhms
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Forward Transconductance Gfs (max / Min): 1.9 S
• Gate Charge Qg: 3.9 nC
• Power Dissipation: 290 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
8. Test information
PMF170XP
Product data sheet
Fig 17. Duty cycle definition
All information provided in this document is subject to legal disclaimers.
P
Rev. 1 — 2 September 2011
t
1
t
2
duty cycle δ =
006aaa812
t
t
t
1
2
20 V, 1 A P-channel Trench MOSFET
PMF170XP
© NXP B.V. 2011. All rights reserved.
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