PMF170XP,115 NXP Semiconductors, PMF170XP,115 Datasheet - Page 4

• Manufacturer Part Number: PMF170XP,115
• Description: MOSFET P-CH -20 V -1 A
• Manufacturer: NXP Semiconductors

Specifications of PMF170XP,115

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 1 A
• Resistance Drain-source Rds (on): 200 mOhms
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Forward Transconductance Gfs (max / Min): 1.9 S
• Gate Charge Qg: 3.9 nC
• Power Dissipation: 290 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
6. Thermal characteristics
Table 6.
[1]
[2]
PMF170XP
Product data sheet
Symbol
R
R
Fig 4.
Fig 5.
th(j-a)
th(j-sp)
Z
Z
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
3
2
10
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
–3
-3
duty cycle = 1
0.75
0.33
0.05
0.01
Thermal characteristics
duty cycle = 1
0.2
0.75
0.33
0.05
0.01
0.2
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
0.25
0.02
0.5
0.1
0
0.25
0.02
0.5
0.1
0
10
10
–2
-2
Conditions
in free air
All information provided in this document is subject to legal disclaimers.
10
10
–1
-1
2
Rev. 1 — 2 September 2011
1
1
10
10
20 V, 1 A P-channel Trench MOSFET
[1]
[2]
2
.
Min
-
-
-
10
10
2
2
PMF170XP
Typ
377
305
65
t
t
p
p
© NXP B.V. 2011. All rights reserved.
(s)
(s)
017aaa301
017aaa302
Max
430
350
75
10
10
3
3
Unit
K/W
K/W
K/W
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