PSMN4R3-100PS,127 NXP Semiconductors, PSMN4R3-100PS,127 Datasheet - Page 13
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PSMN4R3-100PS,127
Manufacturer Part Number
PSMN4R3-100PS,127
Description
MOSFET N-Ch 100V 4.3 m? std level MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN4R3-100PS127.pdf
(15 pages)
Specifications of PSMN4R3-100PS,127
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Resistance Drain-source Rds (on)
4.3 mOhms
Configuration
Single
Mounting Style
Through Hole
Package / Case
TO-220AB
Fall Time
63 ns
Gate Charge Qg
170 nC
Power Dissipation
338 W
Rise Time
91 ns
Factory Pack Quantity
50
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PSMN4R3-100PS
Product data sheet
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Rev. 1 — 27 October 2011
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
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PSMN4R3-100PS
© NXP B.V. 2011. All rights reserved.
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