PSMN4R3-100PS,127 NXP Semiconductors, PSMN4R3-100PS,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN4R3-100PS,127
• Description: MOSFET N-Ch 100V 4.3 m? std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-100PS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 4.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 63 ns
• Gate Charge Qg: 170 nC
• Power Dissipation: 338 W
• Rise Time: 91 ns
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN4R3-100PS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
I
(pF)
10
10
10
10
10
10
D
10
10
10
10
C
−1
−2
−3
−4
−5
−6
5
4
3
2
10
function of gate-source voltage, typical values
gate-source voltage
Input and reverse transfer capacitances as a
0
-1
1
2
min
typ
10
4
max
V
V
GS
All information provided in this document is subject to legal disclaimers.
GS
C
C
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iss
rss
(V)
(V)
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10
Rev. 1 — 27 October 2011
6
2
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.8
2.4
1.6
1.2
0.8
0.4
5
4
3
2
1
0
2
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN4R3-100PS
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
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003aad280
T
T
j
j
(°C)
(°C)
180
180
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