PSMN4R3-100PS,127 NXP Semiconductors, PSMN4R3-100PS,127 Datasheet - Page 2

• Manufacturer Part Number: PSMN4R3-100PS,127
• Description: MOSFET N-Ch 100V 4.3 m? std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-100PS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 4.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 63 ns
• Gate Charge Qg: 170 nC
• Power Dissipation: 338 W
• Rise Time: 91 ns
• Factory Pack Quantity: 50

NXP Semiconductors
[2]
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN4R3-100PS
Product data sheet
Pin
1
2
3
mb
Type number
PSMN4R3-100PS
Measured 3 mm from package.
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to drain
TO-220AB
Package
Name
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 27 October 2011
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
Simplified outline
SOT78 (TO-220AB)
1 2
mb
3
PSMN4R3-100PS
Graphic symbol
mbb076
G
© NXP B.V. 2011. All rights reserved.
Version
SOT78
D
S
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