TK32E12N1,S1X Toshiba
TK32E12N1,S1X
Manufacturer Part Number
TK32E12N1,S1X
Description
MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC
Manufacturer
Toshiba
Specifications of TK32E12N1,S1X
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
120 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
60 A
Resistance Drain-source Rds (on)
11 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220
Fall Time
14 ns
Gate Charge Qg
34 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
98 W
Rise Time
14 ns
Typical Turn-off Delay Time
43 ns
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