PSMN050-80BS,118 NXP Semiconductors, PSMN050-80BS,118 Datasheet - Page 11

• Manufacturer Part Number: PSMN050-80BS,118
• Description: MOSFET N-CH 80 V 46 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN050-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 73 V
• Gate-source Breakdown Voltage: 5.2 V
• Continuous Drain Current: 22 A
• Resistance Drain-source Rds (on): 46 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 56 W
• Factory Pack Quantity: 800

NXP Semiconductors
8. Revision history
Table 7.
PSMN050-80BS
Product data sheet
Document ID
PSMN050-80BS v.1
Revision history
Release date
20120302
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Rev. 1 — 2 March 2012
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
Change notice
-
PSMN050-80BS
Supersedes
-
© NXP B.V. 2012. All rights reserved.
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