PSMN050-80BS,118 NXP Semiconductors, PSMN050-80BS,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN050-80BS,118
• Description: MOSFET N-CH 80 V 46 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN050-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 73 V
• Gate-source Breakdown Voltage: 5.2 V
• Continuous Drain Current: 22 A
• Resistance Drain-source Rds (on): 46 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 56 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN050-80BS
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
2.5
2.0
1.5
1.0
0.5
0.0
10
a
GS
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
-30
0
5
V
30
DS
= 40 V
60
90
10
120
Q
All information provided in this document is subject to legal disclaimers.
G
003aad045
003aad050
(nC)
150
T
j
(°C)
180
15
Rev. 1 — 2 March 2012
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
Fig 14. Gate charge waveform definitions
Fig 16. Source (diode forward) current as a function of
100
(A)
I
80
60
40
20
S
0
source-drain (diode forward) voltage; typical
values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
0.5
I
Q
D
PSMN050-80BS
175 °C
GS
Q
GS2
Q
G(tot)
Q
GD
1
T
j
© NXP B.V. 2012. All rights reserved.
V
= 25 °C
SD
003aaa508
003aad049
(V)
1.5
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