2SK3565(STA4,Q,M Toshiba, 2SK3565(STA4,Q,M Datasheet

2SK3565(STA4,Q,M

Manufacturer Part Number

2SK3565(STA4,Q,M

Description

MOSFET N-Ch 900V 5A Rdson 2.5 Ohm

Manufacturer

Toshiba

Datasheet

1.2SK3565STA4QM.pdf (6 pages)

Specifications of 2SK3565(STA4,Q,M

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

900 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

5 A

Resistance Drain-source Rds (on)

2 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

SC-67

Minimum Operating Temperature

- 55 C

Power Dissipation

45 W

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Switching Regulator Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)

= 90 V, T

Pulse (t = 1 ms)

DSS

= 20 kΩ)

= 2.0 to 4.0 V (V

= 25°C(Initial), L = 43.6 mH, I

(Note 1)

(Note 2)

= 100 μA (V

DS (ON)

(Ta = 25°C)

| = 4.5 S (typ.)

Symbol

DGR

GSS

DSS

stg

2SK3565

= 720 V)

Symbol

th (ch-a)

th (ch-c)

= 2.0 Ω (typ.)

= 10 V, I

-55~150

Rating

900

±30

595

150

4.5

= 1 mA)

Max

2.78

62.5

= 5.0 A, R

Unit

°C

°C/W

Unit

= 25 Ω

Weight : 1.7 g (typ.)

JEDEC

JEITA

TOSHIBA

1: Gate

2: Drain

3: Source

2-10U1B

SC-67

2009-09-29

―

2SK3565

Unit: mm

Related parts for 2SK3565(STA4,Q,M

2SK3565(STA4,Q,M Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

I – COMMON 8 6 SOURCE 25°C 4 PULSE TEST 4 DRAIN-SOURCE VOLTAGE – ...

Page 4

R – (ON) 10 COMMON SOURCE PULSE TEST 1 −80 − CASE TEMPERATURE Tc (°C) CAPACITANCE – 10000 1000 ...

Page 5

Duty=0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.001 10μ 100μ SAFE OPERATING AREA 100 I D max (PULSED 100 μ max (CONTINUOUS OPERATION 1 Tc ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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