2SK3565(STA4,Q,M Toshiba, 2SK3565(STA4,Q,M Datasheet - Page 3

• Manufacturer Part Number: 2SK3565(STA4,Q,M
• Description: MOSFET N-Ch 900V 5A Rdson 2.5 Ohm
• Manufacturer: Toshiba

Specifications of 2SK3565(STA4,Q,M

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Resistance Drain-source Rds (on): 2 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: SC-67
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 45 W

0.1
10
10
5
4
3
2
1
0
8
6
4
2
0
1
0.1
0
0
COMMON
SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
V DS = 20 V
PULSE TEST
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
4
2
DRAIN CURRENT I
100
8
10
4
⎪Y
I
8
I
D
D
Tc = −55°C
fs
– V
– V
12
⎪ – I
1
DS
GS
D
100
6
25
Tc = −55°C
COMMON SOURCE
V DS = 20 V
PULSE TEST
16
6
D
GS
(A)
DS
V GS = 4.5 V
25
8
20
5.5
5.25
4.75
(V)
(V)
5
24
10
10
3
20
14
12
10
0.01
6
5
4
3
2
1
0
8
4
0
5
3
1
0
0
COMMON
SOURCE
Tc = 25°C
PULSE TEST
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
COMMON SOURCE
Tc = 25°C
PULSE TEST
4
DRAIN CURRENT I
10
0.1
R
V GS = 10 V､15V
V
DS (ON)
10
8
I
DS
D
– V
– V
DS
6
GS
– I
12
I D = 5 A
COMMON SOURCE
Tc = 25℃
PULSE TEST
D
20
1
D
8
V GS = 4 .5V
GS
(A)
DS
3
16
1.5
5.5
5.25
4.75
(V)
2009-09-29
5
(V)
2SK3565
30
20
10