IRF840BPBF Vishay/Siliconix, IRF840BPBF Datasheet - Page 3

• Manufacturer Part Number: IRF840BPBF
• Description: MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of IRF840BPBF

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Resistance Drain-source Rds (on): 850 mOhms at 10 V
• Configuration: Single
• Package / Case: TO-220AB-3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91070
S11-0506-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91070_01
91070_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
0
1
1
0
10
10
Top
Bottom
0
Top
Bottom
0
V
V
DS
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS ,
V
15 V
10 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
150 °C
This datasheet is subject to change without notice.
C
C
= 150 °C
= 25 °C
4.5 V
4.5 V
91070_04
91070_03
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
- 60 - 40 - 20 0
Fig. 3 - Typical Transfer Characteristics
4
I
V
D
GS
= 8.0 A
150
= 10 V
V
5
GS ,
°
C
25
T
J ,
Gate-to-Source Voltage (V)
°
Junction Temperature (°C)
C
6
20 40 60 80 100 120 140 160
IRF840, SiHF840
7
www.vishay.com/doc?91000
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
www.vishay.com
9
10
3