IRF840BPBF Vishay/Siliconix, IRF840BPBF Datasheet - Page 5

• Manufacturer Part Number: IRF840BPBF
• Description: MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of IRF840BPBF

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Resistance Drain-source Rds (on): 850 mOhms at 10 V
• Configuration: Single
• Package / Case: TO-220AB-3

Document Number: 91070
S11-0506-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91070_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
8.0
6.0
4.0
2.0
0.0
91070_11
25
10
10
0.1
10
-3
-2
1
10
50
T
0.02
0 - 0.5
0.2
0.1
0.05
0.01
-5
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
-4
100
Single Pulse
(Thermal Response)
This datasheet is subject to change without notice.
125
10
-3
150
t
1
, Rectangular Pulse Duration (S)
10
-2
0.1
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
1
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
IRF840, SiHF840
j
= P
P
10
D.U.T.
DM
www.vishay.com/doc?91000
DM
Vishay Siliconix
R
x Z
D
t
d(off)
t
1
1
thJC
/t
2
t
+ T
2
t
f
10
C
+
-
www.vishay.com
V
2
DD
5