IRF840BPBF Vishay/Siliconix, IRF840BPBF Datasheet - Page 4

• Manufacturer Part Number: IRF840BPBF
• Description: MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of IRF840BPBF

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Resistance Drain-source Rds (on): 850 mOhms at 10 V
• Configuration: Single
• Package / Case: TO-220AB-3

IRF840, SiHF840
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
91070_05
91070_06
2500
2000
1500
1000
500
20
16
12
0
8
4
0
10
0
0
I
D
= 8.0 A
V
DS ,
15
Q
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
= 100 V
V
30
V
C
C
C
DS
GS
iss
rss
oss
= 250 V
= 0 V, f = 1 MHz
= C
= C
= C
V
DS
10
gs
gd
ds
45
= 400 V
C
1
+ C
C
+ C
C
rss
oss
iss
gd
gd
, C
For test circuit
see figure 13
This datasheet is subject to change without notice.
ds
60
Shorted
75
91070_07
91070_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
Fig. 8 - Maximum Safe Operating Area
0
1
1
2
5
2
5
2
5
2
0.4
0.1
2
V
V
5
SD
0.6
DS
1
, Source-to-Drain Voltage (V)
Operation in this area limited
, Drain-to-Source Voltage (V)
2
150
5
°
0.8
T
T
Single Pulse
10
C
C
J
by R
= 150 °C
= 25 °C
2
S11-0506-Rev. C, 21-Mar-11
DS(on)
www.vishay.com/doc?91000
5
Document Number: 91070
1.0
25
10
2
°
C
2
5
10
1
100
10
1.2
10
V
ms
GS
µs
ms
3
µs
2
= 0 V
5
1.4
10
4