TPCP8F01(TE85L,F,M Toshiba, TPCP8F01(TE85L,F,M Datasheet
TPCP8F01(TE85L,F,M
Specifications of TPCP8F01(TE85L,F,M
Related parts for TPCP8F01(TE85L,F,M
TPCP8F01(TE85L,F,M Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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Common Absolute Maximum Rating (Ta = 25°C) Characteristics Storage temperature range Figure 2 Marking (Note 8F01 Lot No. * (Weekly code Note 3 : Black round marking "・" located on the ...
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Electrical Characteristics Transistor Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector Output Capacitance Rise time Switching time Storage time Fall time Figure 3. Switching Time Test Circuit & ...
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PNP I – −6 Common emitter Ta = 25°C Single nonrepetitive pulse −5 −80 mA −100 mA −4 −3 −2 −1 0 −0.4 −0.8 −1.2 0 Collector-emitter voltage V V – (sat Common ...
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Safe Operation Area max (pulsed) * 100 μs* 10 ms* 1 ms* 10 μ max (continuous) 100 ms* DC OPERATION 1 (Ta = 25° Single nonrepetitive ...
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Nch-MOS I – 250 4 3 2.5 2.3 2.1 10 200 150 100 0.5 1.0 Drain−source voltage V R – (ON) 8 Common source ...
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1000 Common source 100 100° −25 0.1 0. Gate−source voltage V GS − 2.0 Common source ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...