BUK9609-55A /T3 NXP Semiconductors, BUK9609-55A /T3 Datasheet - Page 10

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BUK9609-55A /T3

Manufacturer Part Number
BUK9609-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9609-55A /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
108 A
Resistance Drain-source Rds (on)
0.008 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Fall Time
131 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
211 W
Rise Time
149 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
197 ns
Part # Aliases
BUK9609-55A,118
NXP Semiconductors
7. Package outline
Fig 16. Package outline SOT404 (D2PAK)
BUK9609-55A
Product data sheet
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
All information provided in this document is subject to legal disclaimers.
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
Rev. 02 — 3 February 2011
10.30
9.70
E
3
0
b
2.54
e
JEITA
scale
2.5
2.90
2.10
L p
5 mm
15.80
14.80
H D
mounting
2.60
2.20
Q
base
N-channel TrenchMOS logic level FET
L p
A 1
Q
PROJECTION
c
EUROPEAN
BUK9609-55A
A
© NXP B.V. 2011. All rights reserved.
ISSUE DATE
05-02-11
06-03-16
SOT404
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