BUK9609-55A /T3 NXP Semiconductors, BUK9609-55A /T3 Datasheet - Page 5

• Manufacturer Part Number: BUK9609-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9609-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 108 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 131 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 211 W
• Rise Time: 149 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 197 ns
• Part # Aliases: BUK9609-55A,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9609-55A
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
d = 0.5
0.2
0.1
0.05
0.02
single shot
−6
10
−5
All information provided in this document is subject to legal disclaimers.
10
Rev. 02 — 3 February 2011
−4
Conditions
see
mounted on a printed-circuit
board ; minimum footprint
Figure 4
10
−3
10
−2
N-channel TrenchMOS logic level FET
P
t
10
p
−1
T
t
p
BUK9609-55A
Min
-
-
δ =
(s)
03nh26
t
T
t
p
1
Typ
-
50
© NXP B.V. 2011. All rights reserved.
Max
0.71
-
Unit
K/W
K/W
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