BUK9609-55A /T3 NXP Semiconductors, BUK9609-55A /T3 Datasheet - Page 9

• Manufacturer Part Number: BUK9609-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9609-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 108 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 131 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 211 W
• Rise Time: 149 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 197 ns
• Part # Aliases: BUK9609-55A,118

NXP Semiconductors
BUK9609-55A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
gate charge; typical values
0
20
V
DD
= 14 V
40
(A)
I
S
100
75
50
25
0
0.0
Q
All information provided in this document is subject to legal disclaimers.
44 V
G
(nC)
03nh60
Rev. 02 — 3 February 2011
60
0.3
175 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
9000
6000
3000
C
T
0.9
0
10
as a function of drain-source voltage; typical
values
j
= 25 °C
−2
V
SD
03nh59
(V)
C
C
N-channel TrenchMOS logic level FET
oss
rss
1.2
10
−1
C
iss
BUK9609-55A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nh66
(V)
10
2
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