BSS192 /T3 NXP Semiconductors, BSS192 /T3 Datasheet - Page 2
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BSS192 /T3
Manufacturer Part Number
BSS192 /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BSS192_T3.pdf
(12 pages)
Specifications of BSS192 /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
240 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89
Fall Time
18 ns
Minimum Operating Temperature
- 65 C
Power Dissipation
1000 mW
Rise Time
18 ns
Factory Pack Quantity
4000
Part # Aliases
BSS192,135
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a SOT89 package.
QUICK REFERENCE DATA
2002 May 22
V
V
I
R
D
SYMBOL
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
Line current interrupter in telephone sets
Relay, high-speed and line transformer drivers.
DS
GSth
DSon
P-channel enhancement mode
vertical D-MOS transistor
drain-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
PARAMETER
I
I
D
D
= 1 mA; V
= 200 mA; V
2
PINNING - SOT89
handbook, halfpage
Marking code: KB.
PIN
CONDITIONS
1
2
3
GS
Bottom view
GS
Fig.1 Simplified outline and symbol.
= V
1
= 10 V
DS
SYMBOL
2
d
g
s
3
source
drain
gate
MAM354
12
240
2.8
200
MAX.
Product specification
DESCRIPTION
g
BSS192
d
s
V
V
mA
UNIT