BSS192 /T3 NXP Semiconductors, BSS192 /T3 Datasheet - Page 6

• Manufacturer Part Number: BSS192 /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BSS192 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 240 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Fall Time: 18 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 1000 mW
• Rise Time: 18 ns
• Factory Pack Quantity: 4000
• Part # Aliases: BSS192,135

Philips Semiconductors
2002 May 22
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
I
Fig.10 Temperature coefficient of drain-source
k
D
= 200 mA; V
=
2.5
k
1.5
0.5
---------------------------------------- -
R
2
1
0
DSon
R
50
DSon
on-state resistance; typical values.
at 25 C
at T
GS
j
= 10 V.
0
50
100
T j (
MDA181
o
C)
150
6
Product specification
BSS192