BUK9640-100A /T3 NXP Semiconductors, BUK9640-100A /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK9640-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9640-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 39 A
• Resistance Drain-source Rds (on): 0.039 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 90 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 158 W
• Rise Time: 135 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 125 ns
• Part # Aliases: BUK9640-100A,118

NXP Semiconductors
BUK9640-100A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
80
60
40
20
50
45
40
35
30
25
20
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
10
0
20
T
j
= 175 °C
1
30
40
2
V
GS
= 3.0 (V)
50
T
j
= 25 °C
3
All information provided in this document is subject to legal disclaimers.
V
60
GS
I
3.2
3.4
3.6
D
4.0
5.0
03na61
03na67
10
(V)
(A)
70
4
Rev. 04 — 31 May 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
1.5
0.5
2.8
2.1
1.4
0.7
a
2
1
0
0
-60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9640-100A
60
60
max
typ
min
120
120
© NXP B.V. 2010. All rights reserved.
T
03aa33
T
j
j
( ° C)
03ng41
(°C)
180
180
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