BUK9640-100A /T3 NXP Semiconductors, BUK9640-100A /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK9640-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9640-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 39 A
• Resistance Drain-source Rds (on): 0.039 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 90 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 158 W
• Rise Time: 135 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 125 ns
• Part # Aliases: BUK9640-100A,118

NXP Semiconductors
BUK9640-100A
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
0
V
DD
= 14 (V)
20
40
(A)
I
V
S
100
DD
80
60
40
20
0
= 80 (V)
Q
0
All information provided in this document is subject to legal disclaimers.
G
(nC)
03na63
T
j
= 175 °C
60
0.5
Rev. 04 — 31 May 2010
1.0
Fig 14. Input, output and reverse transfer capacitances
(pF)
T
6000
C
5000
4000
3000
2000
1000
j
= 25 °C
1.5
0
10
as a function of drain-source voltage; typical
values
−2
V
SD
03na62
(V)
N-channel TrenchMOS logic level FET
C
C
C
2.0
rss
iss
oss
10
−1
BUK9640-100A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03na68
(V)
10
2
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