SI3433BDV-T1 Vishay/Siliconix, SI3433BDV-T1 Datasheet
SI3433BDV-T1
Specifications of SI3433BDV-T1
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SI3433BDV-T1 Summary of contents
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... GS TSOP-6 Top V iew 2.85 mm Ordering Information: Si3433BDV-T1-E3 (Lead (Pb)-free) Si3433BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: B3xxx ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
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... Si3433BDV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72027 S09-0766-Rev. D, 04-May-09 2500 2000 1500 1000 °C J 0.8 1.0 1.2 Si3433BDV Vishay Siliconix C iss 500 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1 ...
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... Si3433BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 250 µA D 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on °C A 0.1 Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage (V) ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72027. Document Number: 72027 S09-0766-Rev. D, 04-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3433BDV Vishay Siliconix - www.vishay.com ...
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TSOP: 5/6−LEAD JEDEC Part Number: MO-193C 5-LEAD TSOP D 0.08 C Dim ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 Document Number: 71200 18-Dec- 0.15 M ...
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... Surface mounted power MOSFET packaging has been based on integrated circuit and small signal packages. Those packages have been modified to provide the improvements in heat transfer required by power MOSFETs. Leadframe materials and design, molding compounds, and die attach materials have been changed. What has remained the same is the footprint of the packages ...
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AN823 Vishay Siliconix 140 − 170_C 3_C/s (max) FIGURE 3. Solder Reflow Temperature and Time Durations THERMAL PERFORMANCE A basic measure of a device’s thermal performance is the junction-to-case thermal resistance, junction-to-foot thermal resistance, Rq measured for the device mounted ...
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Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR TSOP-6 Return to Index Return to Index www.vishay.com 26 0.099 (2.510) 0.039 0.020 0.019 (1.001) (0.508) (0.493) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72610 Revision: 21-Jan-08 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...