SI3433BDV-T1 Vishay/Siliconix, SI3433BDV-T1 Datasheet - Page 3

• Manufacturer Part Number: SI3433BDV-T1
• Description: MOSFET 20V 5.6A 1.1W
• Manufacturer: Vishay/Siliconix

Specifications of SI3433BDV-T1

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.3 A
• Resistance Drain-source Rds (on): 0.042 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 45 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 80 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72027
S09-0766-Rev. D, 04-May-09
0.15
0.12
0.09
0.06
0.03
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5.6 A
0.2
On-Resistance vs. Drain Current
= 10 V
V
GS
4
3
V
= 1.8 V
Q
SD
g
0.4
I
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
8
T
0.6
6
J
= 150 °C
12
0.8
V
V
GS
GS
T
9
J
= 25 °C
16
= 2.5 V
= 4.5 V
1.0
20
12
1.2
2500
2000
1500
1000
0.15
0.12
0.09
0.06
0.03
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
- 25
D
GS
= 5.6 A
= 4.5 V
1
4
V
V
T
GS
0
J
DS
C
C
- Junction Temperature (°C)
oss
- Gate-to-Source Voltage (V)
iss
- Drain-to-Source Voltage (V)
25
Capacitance
8
2
I
D
50
= 5.6 A
Vishay Siliconix
Si3433BDV
12
3
75
100
www.vishay.com
16
4
125
150
20
5
3