SI3433BDV-T1 Vishay/Siliconix, SI3433BDV-T1 Datasheet - Page 5
![no-image](/images/no-image-200.jpg)
SI3433BDV-T1
Manufacturer Part Number
SI3433BDV-T1
Description
MOSFET 20V 5.6A 1.1W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI3433BDV-T1.pdf
(10 pages)
Specifications of SI3433BDV-T1
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.3 A
Resistance Drain-source Rds (on)
0.042 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP-6
Fall Time
45 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.1 W
Rise Time
45 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
80 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3433BDV-T1
Manufacturer:
TI
Quantity:
1 800
Part Number:
SI3433BDV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3433BDV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 72027
S09-0766-Rev. D, 04-May-09
0.01
www.vishay.com/ppg?72027.
0.1
2
1
10
-
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
Normalized Thermal Transient Impedance, Junction-to-Foot
-
3
Square Wave Pulse Duration (s)
10
-
2
10
-
1
Vishay Siliconix
1
Si3433BDV
www.vishay.com
1 0
5