BUK7880-55 /T3 NXP Semiconductors, BUK7880-55 /T3 Datasheet - Page 3

• Manufacturer Part Number: BUK7880-55 /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7880-55 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 3.5 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 15 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1800 mW
• Rise Time: 15 ns
• Factory Pack Quantity: 4000
• Typical Turn-off Delay Time: 18 ns
• Part # Aliases: BUK7880-55,135

NXP Semiconductors
BUK7880-55
Product data sheet
Fig 1.
Fig 3.
P
(%)
I
(A)
DM
10
der
100
10
80
60
40
20
10
−1
0
1
2
function of solder point temperature
currents as a function of drain-source voltage
Normalized total power dissipation as a
T
Safe operating area; continuous and peak drain
0
1
sp
R
DS(on)
= 25 °C; I
= V
40
DS
D.C.
/ I
DM
D
is single pulse
80
10
V
DS
120
(V)
All information provided in this document is subject to legal disclaimers.
T
mb
003aaf268
003aaf270
t
p
(°C)
10 μs
100 μs
1 ms
10 ms
100 ms
= 1 μs
160
10
Rev. 3 — 21 April 2011
2
Fig 2.
Fig 4.
WDSS
(%)
(%)
I
D
100
100
80
60
40
20
80
60
40
20
0
0
function of solder point temperature
20
avalanche energy as a function of
mounting-base temperature
Normalized continuous drain current as a
I
Normalised drain-source non-repetitive
0
D
N-channel TrenchMOS standard level FET
= 2.5 A
40
40
60
80
80
100
BUK7880-55
120
120
© NXP B.V. 2011. All rights reserved.
T
mb
003aaf269
003aaf282
140
T
(mb)
(°C)
(°C)
160
160
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