BUK7880-55 /T3 NXP Semiconductors, BUK7880-55 /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK7880-55 /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7880-55 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 3.5 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 15 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1800 mW
• Rise Time: 15 ns
• Factory Pack Quantity: 4000
• Typical Turn-off Delay Time: 18 ns
• Part # Aliases: BUK7880-55,135

NXP Semiconductors
BUK7880-55
Product data sheet
Fig 14. Gate-source voltage as a function of gate
V
(V)
GS
12
8
4
0
charge; typical values
T
0
j
= 25 °C; I
D
V
5
= 7 A
DS
= 14 V
10
V
Q
DS
All information provided in this document is subject to legal disclaimers.
G
003aaf280
(nC)
= 44 V
15
Rev. 3 — 21 April 2011
Fig 15. Source (diode forward) current as a function of
(A)
I
F
40
30
20
10
0
source-drain (diode forward) voltage; typical
values
V
0
GS
N-channel TrenchMOS standard level FET
= 0 V
T
j
= 150 °C
0.5
1.0
T
j
= 25 °C
BUK7880-55
1.5
© NXP B.V. 2011. All rights reserved.
V
SDS
003aaf281
(V)
2.0
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