SI7404DN-T1 Vishay/Siliconix, SI7404DN-T1 Datasheet - Page 3

• Manufacturer Part Number: SI7404DN-T1
• Description: MOSFET 30V 13.3A 3.8W
• Manufacturer: Vishay/Siliconix

Specifications of SI7404DN-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 8.5 A
• Resistance Drain-source Rds (on): 13 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 39 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 39 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 64 ns

TYPICAL CHARACTERISTICS (T
Document Number: 71658
S11-2045-Rev. G, 17-Oct-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.05
0.04
0.03
0.02
0.01
0.00
50
10
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
5
D
DS
On-Resistance vs. Drain Current
0.2
= 13.3 A
1 0
= 15 V
V
SD
10
Q
- Source-to-Drain Voltage (V)
g
0.4
I
- Total Gate Charge (nC)
D
15
- Drain Current (A)
Gate Charge
T
2 0
J
V
GS
= 150 °C
0.6
20
= 2.5 V
3 0
25
0.8
A
This document is subject to change without notice.
= 25 °C, unless otherwise noted)
T
V
30
V
J
GS
GS
= 25 °C
4 0
= 4.5 V
1.0
= 10 V
35
1.2
40
50
3000
2500
2000
1500
1000
0.05
0.04
0.03
0.02
0.01
0.00
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
I
D
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
= 5 A
- 25
V
I
D
GS
= 13.3 A
5
V
= 10 V
2
GS
T
V
J
0
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
I
- Drain-to-Source Voltage (V)
D
10
= 13.3 A
2 5
Capacitance
4
5 0
15
Vishay Siliconix
www.vishay.com/doc?91000
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Si7404DN
20
C
www.vishay.com
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