SI7404DN-T1 Vishay/Siliconix, SI7404DN-T1 Datasheet - Page 5

• Manufacturer Part Number: SI7404DN-T1
• Description: MOSFET 30V 13.3A 3.8W
• Manufacturer: Vishay/Siliconix

Specifications of SI7404DN-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 8.5 A
• Resistance Drain-source Rds (on): 13 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 39 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 39 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 64 ns

TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71658.
Document Number: 71658
S11-2045-Rev. G, 17-Oct-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
A
-3
This document is subject to change without notice.
= 25 °C, unless otherwise noted)
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
-1
JM
- T
t
A
1
= P
t
Vishay Siliconix
2
DM
www.vishay.com/doc?91000
Z
thJA
th J A
100
t
t
Si7404DN
1
2
(t)
= 65 °C/W
www.vishay.com
600
1
5