SI7404DN-T1 Vishay/Siliconix, SI7404DN-T1 Datasheet - Page 4

• Manufacturer Part Number: SI7404DN-T1
• Description: MOSFET 30V 13.3A 3.8W
• Manufacturer: Vishay/Siliconix

Specifications of SI7404DN-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 8.5 A
• Resistance Drain-source Rds (on): 13 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 39 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 39 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 64 ns

Si7404DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- 0.15
- 0.30
- 0.45
- 0.60
0.30
0.15
0.00
- 50
- 25
0
Threshold Voltage
T
I
D
J
- Temperature (°C)
= 2 mA
2 5
5 0
7 5
0.01
100
0.1
10
A
1
This document is subject to change without notice.
0.1
= 25 °C, unless otherwise noted)
100
* V
Safe Operating Area, Junction-to-Ambient
Single Pulse
T
Limited by R
GS
A
= 25 °C
125
> minimum V
V
DS
150
- Drain-to-Source Voltage (V)
DS(on)
1
GS
*
at which R
BVDSS Limited
DS(on)
10
50
40
30
20
10
is specified
0
0.01
100 μs
1 ms
10 ms
100 ms
1 s
10 s
DC
Single Pulse Power, Junction-to-Ambient
0.1
100
1
Time (s)
S11-2045-Rev. G, 17-Oct-11
Document Number: 71658
www.vishay.com/doc?91000
10
100
600