SI1557DH-T1 Vishay/Siliconix, SI1557DH-T1 Datasheet - Page 12
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SI1557DH-T1
Manufacturer Part Number
SI1557DH-T1
Description
MOSFET N/P-Ch 12V 1.0/0.56A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI1557DH-T1.pdf
(14 pages)
Specifications of SI1557DH-T1
Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+/- 12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.3 A, 0.86 A
Resistance Drain-source Rds (on)
0.235 Ohms at 4.5 V, 0.535 Ohms at - 4.5 V
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Fall Time
10 nS, 10 nS
Forward Transconductance Gfs (max / Min)
0.8 S, 1.2 S
Gate Charge Qg
0.8 nC, 1.1 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
600 mW
Rise Time
25 nS, 30 nS
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
25 nS, 15 nS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1557DH-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 71405
12-Dec-03
FIGURE 4.
500
400
300
200
100
10
0
-5
10
-4
Dual SC70-6 Thermal Performance on EVB
10
-3
Alloy 42
10
-2
Time (Secs)
10
-1
1
Copper
10
100
1000
FIGURE 5.
500
400
300
200
100
10
0
-5
10
Dual SC70-6 Comparison on 1-inch
-4
10
-3
10
-2
Time (Secs)
Alloy
42
10
-1
Vishay Siliconix
1
Copper
10
2
100
www.vishay.com
AN816
PCB
1000
3