SI1557DH-T1 Vishay/Siliconix, SI1557DH-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1557DH-T1
• Description: MOSFET N/P-Ch 12V 1.0/0.56A
• Manufacturer: Vishay/Siliconix

Specifications of SI1557DH-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.3 A, 0.86 A
• Resistance Drain-source Rds (on): 0.235 Ohms at 4.5 V, 0.535 Ohms at - 4.5 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 10 nS, 10 nS
• Forward Transconductance Gfs (max / Min): 0.8 S, 1.2 S
• Gate Charge Qg: 0.8 nC, 1.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 600 mW
• Rise Time: 25 nS, 30 nS
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 25 nS, 15 nS

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71944
S10-1054-Rev. C, 03-May-10
0.6
0.5
0.4
0.3
0.2
0.1
0.0
5
4
3
2
1
0
4
3
2
1
0
0.0
0
0
V
V
I
D
GS
DS
= 1.2 A
On-Resistance vs. Drain Current
= 1.8 V
= 6 V
0.2
V
1
1
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
I
V
D
-
GS
Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
0.4
= 5 V thru 2.5 V
V
2
2
GS
= 2.5 V
0.6
V
GS
3
3
0.8
= 4.5 V
2 V
1.5 V
1 V
1.0
4
4
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
4
3
2
1
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
C
GS
= 1.2 A
rss
= 4.5 V
0.5
V
V
Transfer Characteristics
DS
T
GS
3
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
25
iss
Capacitance
1.0
50
6
Vishay Siliconix
1.5
75
T
Si1557DH
C
25 °C
= - 55 °C
www.vishay.com
100
9
2.0
125 °C
C
125
oss
150
2.5
12
3