SI1557DH-T1 Vishay/Siliconix, SI1557DH-T1 Datasheet - Page 6

• Manufacturer Part Number: SI1557DH-T1
• Description: MOSFET N/P-Ch 12V 1.0/0.56A
• Manufacturer: Vishay/Siliconix

Specifications of SI1557DH-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.3 A, 0.86 A
• Resistance Drain-source Rds (on): 0.235 Ohms at 4.5 V, 0.535 Ohms at - 4.5 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 10 nS, 10 nS
• Forward Transconductance Gfs (max / Min): 0.8 S, 1.2 S
• Gate Charge Qg: 0.8 nC, 1.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 600 mW
• Rise Time: 25 nS, 30 nS
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 25 nS, 15 nS

Si1557DH
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
2.0
1.6
1.2
0.8
0.4
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
0.0
0.0
0
V
thru 3.5 V
GS
V
I
D
DS
= 5 V
= 0.8 A
0.5
On-Resistance vs. Drain Current
= 6 V
0.3
V
V
1
DS
Output Characteristics
Q
GS
g
- Drain-to-Source Voltage (V)
1.0
- Total Gate Charge (nC)
= 1.8 V
I
D
- Drain Current (A)
Gate Charge
0.6
1.5
2
V
0.9
GS
V
GS
2.0
= 2.5 V
= 4.5 V
3
1.2
2.5
2.5 V
1.5 V
2 V
3 V
1.5
3.0
4
160
120
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
80
40
0
- 50
0
0
On-Resistance vs. Junction Temperature
V
I
C
- 25
D
GS
rss
= 0.8 A
= 4.5 V
V
V
T
1
GS
Transfer Characteristics
0
3
DS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
25
Capacitance
oss
S10-1054-Rev. C, 03-May-10
50
2
6
T
Document Number: 71944
25 °C
C
= - 55 °C
75
100
3
9
125 °C
125
C
iss
150
12
4