SI1557DH-T1 Vishay/Siliconix, SI1557DH-T1 Datasheet - Page 6
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SI1557DH-T1
Manufacturer Part Number
SI1557DH-T1
Description
MOSFET N/P-Ch 12V 1.0/0.56A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI1557DH-T1.pdf
(14 pages)
Specifications of SI1557DH-T1
Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+/- 12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.3 A, 0.86 A
Resistance Drain-source Rds (on)
0.235 Ohms at 4.5 V, 0.535 Ohms at - 4.5 V
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Fall Time
10 nS, 10 nS
Forward Transconductance Gfs (max / Min)
0.8 S, 1.2 S
Gate Charge Qg
0.8 nC, 1.1 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
600 mW
Rise Time
25 nS, 30 nS
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
25 nS, 15 nS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1557DH-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si1557DH
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
2.0
1.6
1.2
0.8
0.4
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
0.0
0.0
0
V
thru 3.5 V
GS
V
I
D
DS
= 5 V
= 0.8 A
0.5
On-Resistance vs. Drain Current
= 6 V
0.3
V
V
1
DS
Output Characteristics
Q
GS
g
- Drain-to-Source Voltage (V)
1.0
- Total Gate Charge (nC)
= 1.8 V
I
D
- Drain Current (A)
Gate Charge
0.6
1.5
2
V
0.9
GS
V
GS
2.0
= 2.5 V
= 4.5 V
3
1.2
2.5
2.5 V
1.5 V
2 V
3 V
1.5
3.0
4
160
120
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
80
40
0
- 50
0
0
On-Resistance vs. Junction Temperature
V
I
C
- 25
D
GS
rss
= 0.8 A
= 4.5 V
V
V
T
1
GS
Transfer Characteristics
0
3
DS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
25
Capacitance
oss
S10-1054-Rev. C, 03-May-10
50
2
6
T
Document Number: 71944
25 °C
C
= - 55 °C
75
100
3
9
125 °C
125
C
iss
150
12
4