SI1557DH-T1 Vishay/Siliconix, SI1557DH-T1 Datasheet - Page 5

• Manufacturer Part Number: SI1557DH-T1
• Description: MOSFET N/P-Ch 12V 1.0/0.56A
• Manufacturer: Vishay/Siliconix

Specifications of SI1557DH-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.3 A, 0.86 A
• Resistance Drain-source Rds (on): 0.235 Ohms at 4.5 V, 0.535 Ohms at - 4.5 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 10 nS, 10 nS
• Forward Transconductance Gfs (max / Min): 0.8 S, 1.2 S
• Gate Charge Qg: 0.8 nC, 1.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 600 mW
• Rise Time: 25 nS, 30 nS
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 25 nS, 15 nS

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71944
S10-1054-Rev. C, 03-May-10
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.1
Duty Cycle = 0.5
0.2
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Single Pulse
0.02
10
-3
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
1
1
A
= P
t
2
Vishay Siliconix
DM
Z
thJA
100
thJA
t
t
1
2
Si1557DH
(t)
= 220 °C/W
www.vishay.com
600
10
5