SI1557DH-T1 Vishay/Siliconix, SI1557DH-T1 Datasheet - Page 13

• Manufacturer Part Number: SI1557DH-T1
• Description: MOSFET N/P-Ch 12V 1.0/0.56A
• Manufacturer: Vishay/Siliconix

Specifications of SI1557DH-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.3 A, 0.86 A
• Resistance Drain-source Rds (on): 0.235 Ohms at 4.5 V, 0.535 Ohms at - 4.5 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 10 nS, 10 nS
• Forward Transconductance Gfs (max / Min): 0.8 S, 1.2 S
• Gate Charge Qg: 0.8 nC, 1.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 600 mW
• Rise Time: 25 nS, 30 nS
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 25 nS, 15 nS

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Document Number: 72602
18
Revision: 21-Jan-08