SI1557DH-T1 Vishay/Siliconix, SI1557DH-T1 Datasheet - Page 13
![no-image](/images/no-image-200.jpg)
SI1557DH-T1
Manufacturer Part Number
SI1557DH-T1
Description
MOSFET N/P-Ch 12V 1.0/0.56A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI1557DH-T1.pdf
(14 pages)
Specifications of SI1557DH-T1
Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+/- 12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.3 A, 0.86 A
Resistance Drain-source Rds (on)
0.235 Ohms at 4.5 V, 0.535 Ohms at - 4.5 V
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Fall Time
10 nS, 10 nS
Forward Transconductance Gfs (max / Min)
0.8 S, 1.2 S
Gate Charge Qg
0.8 nC, 1.1 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
600 mW
Rise Time
25 nS, 30 nS
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
25 nS, 15 nS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1557DH-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
www.vishay.com
Document Number: 72602
18
Revision: 21-Jan-08