SI1557DH-T1 Vishay/Siliconix, SI1557DH-T1 Datasheet - Page 2
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SI1557DH-T1
Manufacturer Part Number
SI1557DH-T1
Description
MOSFET N/P-Ch 12V 1.0/0.56A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI1557DH-T1.pdf
(14 pages)
Specifications of SI1557DH-T1
Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+/- 12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.3 A, 0.86 A
Resistance Drain-source Rds (on)
0.235 Ohms at 4.5 V, 0.535 Ohms at - 4.5 V
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Fall Time
10 nS, 10 nS
Forward Transconductance Gfs (max / Min)
0.8 S, 1.2 S
Gate Charge Qg
0.8 nC, 1.1 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
600 mW
Rise Time
25 nS, 30 nS
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
25 nS, 15 nS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1557DH-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si1557DH
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
t
SD
rr
fs
gs
gd
r
f
g
V
I
D
V
DS
V
I
V
D
DS
≅ - 0.5 A, V
DS
DS
I
≅ 0.5 A, V
= - 6 V, V
F
I
F
V
= - 9.6 V, V
V
V
V
V
= 9.6 V, V
V
= - 0.39 A, dI/dt = 100 A/µs
= 6 V, V
V
V
GS
I
= 0.39 A, dI/dt = 100 A/µs
V
V
V
V
V
V
V
DS
GS
GS
S
DS
I
DS
V
DS
S
DS
V
DS
DS
DS
GS
GS
GS
DD
= - 0.39 A, V
DD
DS
= - 4.5 V, I
= 0.39 A, V
≤ - 5 V, V
= V
= - 2.5 V, I
= - 1.8 V, I
= - 5 V, I
= - 9.6 V, V
= V
= 0 V, V
= 9.6 V, V
≥ 5 V, V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= - 6 V, R
= 6 V, R
= 5 V, I
N-Channel
N-Channel
P-Channel
P-Channel
GS
GEN
GEN
GS
GS
Test Conditions
GS
GS
GS
, I
= - 4.5 V, I
, I
= 4.5 V, I
D
= 4.5 V, R
= - 4.5 V, R
= 0 V, T
D
D
GS
= 0 V, T
GS
GS
D
D
= - 100 µA
L
D
D
D
D
D
= - 0.77 A
= 100 µA
GS
L
GS
= 1.2 A
GS
= - 0.77 A
GS
= 12 Ω
= 1.2 A
= 1.0 A
= - 0.6 A
= 0.2 A
= - 0.2 A
= 4.5 V
= - 4.5 V
= ± 8 V
= 12 Ω
= 0 V
= 0 V
= 0 V
= 0 V
D
J
D
J
= 85 °C
= 1.2 A
g
= 85 °C
= - 0.1 A
g
= 6 Ω
= 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 0.45
Min.
0.45
- 2
3
S10-1054-Rev. C, 03-May-10
0.195
0.445
0.230
0.735
0.284
Document Number: 71944
Typ.
1.05
- 0.8
0.15
0.20
0.25
0.8
1.2
0.8
0.8
1.1
0.3
15
17
25
30
25
15
10
10
20
25
± 100
± 100
0.235
0.535
0.280
0.880
0.340
Max.
- 1.2
1.26
1.2
1.2
1.8
- 1
- 5
25
25
40
45
40
25
15
15
40
40
1
1
1
5
Unit
nA
µA
nC
ns
Ω
V
A
S
V