SI1557DH-T1 Vishay/Siliconix, SI1557DH-T1 Datasheet - Page 2

• Manufacturer Part Number: SI1557DH-T1
• Description: MOSFET N/P-Ch 12V 1.0/0.56A
• Manufacturer: Vishay/Siliconix

Specifications of SI1557DH-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.3 A, 0.86 A
• Resistance Drain-source Rds (on): 0.235 Ohms at 4.5 V, 0.535 Ohms at - 4.5 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 10 nS, 10 nS
• Forward Transconductance Gfs (max / Min): 0.8 S, 1.2 S
• Gate Charge Qg: 0.8 nC, 1.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 600 mW
• Rise Time: 25 nS, 30 nS
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 25 nS, 15 nS

Si1557DH
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
t
SD
rr
fs
gs
gd
r
f
g
V
I
D
V
DS
V
I
V
D
DS
≅ - 0.5 A, V
DS
DS
I
≅ 0.5 A, V
= - 6 V, V
F
I
F
V
= - 9.6 V, V
V
V
V
V
= 9.6 V, V
V
= - 0.39 A, dI/dt = 100 A/µs
= 6 V, V
V
V
GS
I
= 0.39 A, dI/dt = 100 A/µs
V
V
V
V
V
V
V
DS
GS
GS
S
DS
I
DS
V
DS
S
DS
V
DS
DS
DS
GS
GS
GS
DD
= - 0.39 A, V
DD
DS
= - 4.5 V, I
= 0.39 A, V
≤ - 5 V, V
= V
= - 2.5 V, I
= - 1.8 V, I
= - 5 V, I
= - 9.6 V, V
= V
= 0 V, V
= 9.6 V, V
≥ 5 V, V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= - 6 V, R
= 6 V, R
= 5 V, I
N-Channel
N-Channel
P-Channel
P-Channel
GS
GEN
GEN
GS
GS
Test Conditions
GS
GS
GS
, I
= - 4.5 V, I
, I
= 4.5 V, I
D
= 4.5 V, R
= - 4.5 V, R
= 0 V, T
D
D
GS
= 0 V, T
GS
GS
D
D
= - 100 µA
L
D
D
D
D
D
= - 0.77 A
= 100 µA
GS
L
GS
= 1.2 A
GS
= - 0.77 A
GS
= 12 Ω
= 1.2 A
= 1.0 A
= - 0.6 A
= 0.2 A
= - 0.2 A
= 4.5 V
= - 4.5 V
= ± 8 V
= 12 Ω
= 0 V
= 0 V
= 0 V
= 0 V
D
J
D
J
= 85 °C
= 1.2 A
g
= 85 °C
= - 0.1 A
g
= 6 Ω
= 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 0.45
Min.
0.45
- 2
3
S10-1054-Rev. C, 03-May-10
0.195
0.445
0.230
0.735
0.284
Document Number: 71944
Typ.
1.05
- 0.8
0.15
0.20
0.25
0.8
1.2
0.8
0.8
1.1
0.3
15
17
25
30
25
15
10
10
20
25
± 100
± 100
0.235
0.535
0.280
0.880
0.340
Max.
- 1.2
1.26
1.2
1.2
1.8
- 1
- 5
25
25
40
45
40
25
15
15
40
40
1
1
1
5
Unit
nA
µA
nC
ns
Ω
V
A
S
V