SI3585DV-T1 Vishay/Siliconix, SI3585DV-T1 Datasheet - Page 2

• Manufacturer Part Number: SI3585DV-T1
• Description: MOSFET 20V 2.4/1.8A
• Manufacturer: Vishay/Siliconix

Specifications of SI3585DV-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.4 A
• Resistance Drain-source Rds (on): 0.125 Ohms, 0.2 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 30 ns at N Channel, 34 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 830 mW
• Rise Time: 30 ns at N Channel, 34 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 14 ns at N Channel, 19 ns at P Channel

Si3585DV
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
t
SD
rr
fs
gs
gd
r
f
g
V
V
I
V
DS
D
V
I
DS
DS
D
DS
≅ - 1 A, V
I
= - 10 V, V
F
I
≅ 1 A, V
F
= - 16 V, V
V
V
V
= 10 V, V
V
= - 1.05 A, dI/dt = 100 A/µs
V
= 16 V, V
V
V
V
I
V
= 1.05 A, dI/dt = 100 A/µs
V
V
V
DS
GS
GS
S
V
DS
V
I
DS
S
DD
DS
DS
V
DS
DS
GS
GS
DD
DS
= - 1.05 A, V
DS
= 1.05 A, V
≤ - 5 V, V
= V
= - 4.5 V, I
= - 2.5 V, I
= 0 V, V
= V
= - 16 V, V
= - 5 V, I
= - 10 V, R
≥ 5 V, V
= 4.5 V, I
= 2.5 V, I
= 16 V, V
= 10 V, R
= 5 V, I
N-Channel
N-Channel
GEN
GEN
P-Channel
P-Channel
GS
GS
Test Conditions
GS
GS
GS
GS
, I
, I
= - 4.5 V, I
= 4.5 V, R
= - 4.5 V, R
= 4.5 V, I
D
= 0 V, T
GS
D
= 0 V, T
GS
GS
D
D
= - 250 µA
D
D
D
D
= 250 µA
GS
GS
L
= 2.4 A
= - 1.8 A
GS
GS
L
= ± 12 V
= 2.4 A
= - 1.8 A
= 1.8 A
= - 1.2 A
= 4.5 V
= - 4.5 V
= 10 Ω
= 10 Ω
= 0 V
= 0 V
= 0 V
= 0 V
J
J
D
D
g
= 55 °C
= 55 °C
= 2.4 A
= - 1.8 A
g
= 6 Ω
= 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 0.5
0.6
- 5
5
S09-2275-Rev. D, 02-Nov-09
0.100
0.160
0.160
0.280
- 0.83
Document Number: 71184
Typ.
0.80
3.6
2.1
2.7
0.3
0.4
0.4
0.6
10
11
30
34
14
19
24
30
20
5
6
- 1.10
± 100
± 100
0.125
0.200
0.200
0.340
Max.
1.10
3.2
4.0
- 1
- 5
17
17
50
50
25
30
12
36
50
40
1
5
Unit
nA
µA
nC
ns
Ω
V
A
S
V