SI3585DV-T1 Vishay/Siliconix, SI3585DV-T1 Datasheet - Page 4

• Manufacturer Part Number: SI3585DV-T1
• Description: MOSFET 20V 2.4/1.8A
• Manufacturer: Vishay/Siliconix

Specifications of SI3585DV-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.4 A
• Resistance Drain-source Rds (on): 0.125 Ohms, 0.2 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 30 ns at N Channel, 34 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 830 mW
• Rise Time: 30 ns at N Channel, 34 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 14 ns at N Channel, 19 ns at P Channel

Si3585DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
0.1
10
0.01
- 50
0.1
1
0
2
1
10
-4
- 25
0.05
0.02
Duty Cycle = 0.5
Source-Drain Diode Forward Voltage
0.1
0.2
T
J
= 150 °C
0.3
V
SD
0
Single Pulse
Threshold Voltage
- Source-to-Drain Voltage (V)
I
T
D
J
10
= 250 µA
- Temperature (°C)
25
0.6
-3
50
T
Normalized Thermal Transient Impedance, Junction-to-Ambient
J
0.9
75
= 25 °C
10
100
-2
1.2
125
1.5
150
Square Wave Pulse Duration (s)
10
-1
0.40
0.32
0.24
0.16
0.08
0.00
1
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
I
V
D
GS
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
= 1 A
10
Notes:
0.1
P
- Gate-to-Source Voltage (V)
DM
JM
- T
A
2
t
Time (s)
1
= P
S09-2275-Rev. D, 02-Nov-09
t
DM
I
2
D
Z
Document Number: 71184
= 2.4 A
thJA
thJA
1
100
(t)
3
t
t
1
2
= 87 °C/W
4
600
10
5
30