SI3585DV-T1 Vishay/Siliconix, SI3585DV-T1 Datasheet - Page 8

• Manufacturer Part Number: SI3585DV-T1
• Description: MOSFET 20V 2.4/1.8A
• Manufacturer: Vishay/Siliconix

Specifications of SI3585DV-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.4 A
• Resistance Drain-source Rds (on): 0.125 Ohms, 0.2 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 30 ns at N Channel, 34 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 830 mW
• Rise Time: 30 ns at N Channel, 34 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 14 ns at N Channel, 19 ns at P Channel

Document Number: 71200
18-Dec-06
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
0.08
C
5
1
5-LEAD TSOP
e
e1
2
D
b
ECN: C-06593-Rev. I, 18-Dec-06
DWG: 5540
Dim
A
A
E
e
L
L
4
3
A
b
D
E
L
R
c
e
1
1
1
2
1
1
2
- C -
Min
0.15 M
0.91
0.01
0.90
0.30
0.10
2.95
2.70
1.55
1.80
0.32
0.10
0
- A -
MILLIMETERS
E
A
A
1
2
1
- B -
C
A
0.95 BSC
0.25 BSC
0.60 Ref
7 Nom
B A
Nom
E
Seating Plane
0.32
0.15
3.05
2.85
1.65
1.90
4
-
-
-
-
-
Max
1.10
0.10
1.00
0.45
0.20
3.10
2.98
1.70
2.00
0.50
8
-
R
R
0.0004
0.036
0.035
0.012
0.004
0.106
0.061
0.071
0.012
0.004
0.116
Min
0
6
1
INCHES
4x 1
4x 1
0.0374 BSC
0.010 BSC
0.024 Ref
7 Nom
6-LEAD TSOP
Nom
e
0.038
0.013
0.006
0.120
0.065
0.075
0.112
4
-
-
-
-
e1
5
2
Max
0.043
0.004
0.039
0.018
0.008
0.122
0.117
0.067
0.079
0.020
Package Information
8
-
b
(L
1
)
4
3
0.17 Ref
0.15 M
c
E
Vishay Siliconix
1
L
- B -
L
2
C
Gauge Plane
Seating Plane
B A
E
www.vishay.com
1