IS61C1024AL-12TI ISSI, Integrated Silicon Solution Inc, IS61C1024AL-12TI Datasheet - Page 3

• Manufacturer Part Number: IS61C1024AL-12TI
• Description: IC SRAM 1MBIT 12NS 32TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61C1024AL-12TI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61C1024AL, IS64C1024AL
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
DC ELECTRICAL CHARACTERISTICS
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. B
01/24/05
Symbol
V
T
P
I
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
Symbol
C
C
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Symbol Parameter
V
V
V
V
I
I
Note:
1. V
OUT
LI
LO
STG
TERM
T
OUT
OH
OL
IH
IN
IL
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
IL
= –3.0V for pulse width less than 10 ns.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Parameter
Input Capacitance
Output Capacitance
(1,2)
A
= 25°C, f = 1 MHz, V
(1)
Test Conditions
V
V
GND V
GND V
Outputs Disabled
DD
DD
DD
(1)
= Min., I
= Min., I
= 5.0V.
OUT
IN
(Over Operating Range)
Conditions
V
V
OH
OL
V
OUT
IN
DD
V
= 8.0 mA
= –4.0 mA
= 0V
DD
= 0V
1-800-379-4774
–0.5 to +7.0
–65 to +150
Value
1.5
20
Max.
5
7
Unit
mA
°C
W
V
Com.
Auto.
Com.
Auto.
Ind.
Ind.
Unit
pF
pF
Min.
–0.3
2.4
2.2
—
–1
–2
–5
–1
–2
–5
V
DD
Max.
0.4
0.8
ISSI
—
1
2
5
1
2
5
+ 0.5
Unit
µA
µA
V
V
V
V
®
3