MT46H16M16LFBF-6:A TR Micron Technology Inc, MT46H16M16LFBF-6:A TR Datasheet - Page 34
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MT46H16M16LFBF-6:A TR
Manufacturer Part Number
MT46H16M16LFBF-6:A TR
Description
IC DDR SDRAM 256MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H16M16LFBF-6:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (16Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
100mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1319-2
Figure 19:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Command
Address
Address
READ-to-WRITE
DQS
DQS
CK#
CK#
DM
DM
DQ
DQ
CK
CK
Notes:
READ
Bank,
Col n
READ
Bank,
Col n
T0
T0
5. CKE = HIGH.
1. D
2. D
3. BL = 4 in the cases shown (applies for bursts of 8 as well; if BL = 2, the BST command shown
4. Shown with nominal
5. BST = BURST TERMINATE command; page remains open.
6. CKE = HIGH.
can be a NOP).
OUT
IN
b = data-in from column b.
n = data-out from column n.
BST
BST
T1
T1
5
CL = 2
5
CL = 3
T1n
t
AC,
D
OUT
n
NOP
T2
NOP
T2
t
DQSCK, and
34
D
n+1
T2n
T2n
OUT
D
OUT
n
WRITE
NOP
Bank,
Col b
T3
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
256Mb: x16, x32 Mobile DDR SDRAM
DQSQ.
t DQSS (NOM)
Transitioning data
D
n+1
OUT
T3n
T3n
WRITE
Bank,
T4
Col b
D
T4
NOP
b
IN
t DQSS (NOM)
T4n
T4n
b+1
D
IN
©2005 Micron Technology, Inc. All rights reserved.
b+2
D
D
T5
T5
NOP
NOP
b
Don’t Care
IN
IN
b+1
T5n
D
T5n
b+3
D
IN
IN
Operations