MT46H16M16LFBF-6:A TR Micron Technology Inc, MT46H16M16LFBF-6:A TR Datasheet - Page 46
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MT46H16M16LFBF-6:A TR
Manufacturer Part Number
MT46H16M16LFBF-6:A TR
Description
IC DDR SDRAM 256MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H16M16LFBF-6:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (16Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
100mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1319-2
Figure 31:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-PRECHARGE – Odd Number of Data, Interrupting
WRITE
Bank a,
Notes:
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An interrupted burst of 8 is shown.
3.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5. PRE = PRECHARGE command.
6. DQS is required at T4 and T4n to register DM.
7. If the burst of 4 is used, DQS and DM are not required at T3, T3n, T4, and T4n.
D
t
b
WR is referenced from the first positive CK edge after the last data-in pair.
IN
IN
NOP
D
T1
b
b = data-in for column b.
IN
D
b
IN
T1n
NOP
T2
T2n
46
t
NOP
WR
T3
2
T3n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
(a or all)
PRE
Bank
T4
Transitioning data
5
T4n
NOP
T5
©2005 Micron Technology, Inc. All rights reserved.
Don’t Care
T6
NOP
Operations