MT46H16M16LFBF-6:A TR Micron Technology Inc, MT46H16M16LFBF-6:A TR Datasheet - Page 45
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MT46H16M16LFBF-6:A TR
Manufacturer Part Number
MT46H16M16LFBF-6:A TR
Description
IC DDR SDRAM 256MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H16M16LFBF-6:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (16Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
100mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1319-2
Figure 30:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-PRECHARGE – Interrupting
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An interrupted burst of 8 is shown; two data elements are written.
3.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5. PRE = PRECHARGE command.
6. DQS is required at T4 and T4n (nominal case) to register DM.
7. If a burst of 4 is used, DQS and DM are not required at T3, T3n, T4, and T4n.
t
D
WR is referenced from the first positive CK edge after the last data-in pair.
b
IN
IN
NOP
b = data-in for column b.
D
T1
b
IN
b + 1
D
D
b
IN
IN
T1n
b + 1
D
IN
b + 1
D
IN
NOP
T2
T2n
45
t
WR
T3
NOP
T3n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
(a or all)
Transitioning data
PRE
Bank
T4
5
T4n
T5
NOP
©2005 Micron Technology, Inc. All rights reserved.
Don’t Care
T6
NOP
Operations