RN1111MFV Toshiba, RN1111MFV Datasheet

RN1111MFV

Manufacturer Part Number

RN1111MFV

Description

Transistors Switching - Resistor Biased 100mA 50volts 10Kohms

Manufacturer

Toshiba

Datasheet

1.RN1111MFV.pdf (6 pages)

Specifications of RN1111MFV

Product Category

Transistors Switching - Resistor Biased

Rohs

yes

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

RN1111MFV(TPL3)

Manufacturer:

Toshiba

Quantity:

7 975

Current page: 1 of 6
Download datasheet (316Kb)

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Equivalent Circuit

Absolute Maximum Ratings

Pad Dimension（Reference）

enabling the manufacture of ever more compact equipment and lowering

assembly cost.

Note:

Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Ultra-small package, suited to very high density mounting

Incorporating a bias resistor into the transistor reduces the number of parts, so

A wide range of resistor values is available for use in various circuits.

Complementary to the RN2110MFV,RN2111MFV

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristic

1.15

RN1110MFV,RN1111MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

0.4

0.5

0.4

0.45

(Ta = 25°C)

(Bias Resistor built-in Transistor)

Symbol

(Note 1)

CBO

CEO

EBO

stg

Unit：mm

−55 to 150

Rating

100

150

Unit

°C

RN1110MFV,RN1111MFV

JEDEC

JEITA

TOSHIBA

Weight: 1.5 mg (typ.)

VESM

0.80 ± 0.05

1.2 ± 0.05

1. BASE

2. EMITTER

3. COLLECTOR

2-1L1A

2010-06-01

―

Unit: mm

Related parts for RN1111MFV

Related keywords

RN1111MFV datasheet
RN1111MFV data sheet
RN1111MFV pdf datasheet
RN1111MFV component
RN1111MFV part
RN1111MFV distributor
RN1111MFV RoHS
RN1111MFV datasheet download