RN2103MFV Toshiba, RN2103MFV Datasheet

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RN2103MFV

Manufacturer Part Number
RN2103MFV
Description
Transistors Switching - Resistor Biased INCORRECT MOUSER P/N 22x22Kohms
Manufacturer
Toshiba
Datasheet

Specifications of RN2103MFV

Product Category
Transistors Switching - Resistor Biased
Rohs
yes
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
Land Pattern Example
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and lowering
assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to the RN1101MFV to RN1106MFV
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note:
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1.15
0.4
Characteristic
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
0.5
RN2101MFV,RN2102MFV,RN2103MFV
RN2104MFV,RN2105MFV,RN2106MFV
0.4
0.4
RN2101MFV to 2106MFV
RN2101MFV to 2104MFV
RN2101MFV to 2106MFV
0.45
RN2105MFV, 2106MFV
Unit:mm
0.45
RN2101MFV
RN2102MFV
RN2103MFV
RN2104MFV
RN2105MFV
RN2106MFV
(Ta = 25°C)
Type No.
R1 (kΩ)
P
4.7
2.2
4.7
10
22
47
Symbol
C
1
V
V
V
(Note 1)
T
CBO
CEO
EBO
I
T
stg
C
j
R2 (kΩ)
4.7
10
22
47
47
47
−55 to 150
Rating
−100
−50
−50
−10
150
150
−5
RN2101MFV∼RN2106MFV
JEDEC
JEITA
TOSHIBA
Weight: 1.5 mg (typ.)
VESM
Unit
mW
mA
°C
°C
V
V
V
1
1
2
0.80 ± 0.05
1.2 ± 0.05
1. BASE
2. EMITTER
3. COLLECTOR
2-1L1A
2010-04-06
3
Unit: mm

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RN2103MFV Summary of contents

Page 1

... Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm) Land Pattern Example Unit:mm 0.5 0.45 1.15 0.4 0.4 0.4 Type No. R1 (kΩ) R2 (kΩ) RN2101MFV 4.7 4.7 RN2102MFV 10 10 RN2103MFV 22 22 RN2104MFV 47 47 RN2105MFV 2.2 47 RN2106MFV 4.7 47 (Ta = 25°C) Symbol V CBO V CEO V EBO ...

Page 2

... RN2105MFV RN2106MFV RN2101MFV to 2104MFV Input voltage (OFF) RN2105MFV, 2106MFV RN2101MFV to Transition frequency 2106MFV Collector output RN2101MFV to capacitance 2106MFV RN2101MFV RN2102MFV RN2103MFV Input resistor RN2104MFV RN2105MFV RN2106MFV RN2101MFV to 2104MFV Resistor ratio RN2105MFV RN2106MFV (Ta = 25°C) Test Symbol Test Condition Circuit = − ...

Page 3

... RN2101MFV IC - VI(ON) -100 Ta = 100°C - -25 EMMITER COMMON VCE = -0.2V -0.1 -0.1 -1 -10 INPUT VOLTAGE VI(ON RN2103MFV IC - VI(ON) -100 - 100° -25 EMMITER COMMON VCE = -0.2V -0.1 -0.1 -1 -10 INPUT VOLTAGE VI(ON RN2105MFV IC - VI(ON) -100 Ta = 100°C - -25 EMMITER COMMON VCE = -0.2V -0.1 -0.1 -1 -10 INPUT VOLTAGE VI(ON RN2101MFV∼RN2106MFV RN2102MFV -100 - 100° ...

Page 4

... RN2101MFV (OFF) -10000 EMITTER COMMON VCE = -5 V -1000 Ta = 100°C 25 -100 -10 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 INPUT VOLTAGE   VI (OFF RN2103MFV (OFF) -10000 EMITTER COMMON VCE = -5 V -1000 Ta = 100°C 25 -100 -10 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 INPUT VOLTAGE   VI (OFF RN2105MFV (OFF) -10000 EMITTER COMMON VCE = -5 V -1000 Ta = 100° ...

Page 5

... RN2101MFV hFE - IC 1000 Ta = 100°C 100 -25 10 EMITTER COMMON VCE = - -10 COLLECTOR CURRENT   IC (mA) RN2103MFV RN2963FS hFE - IC 1000 Ta = 100°C 100 -25 EMITTER COMMON VCE = - -10 COLLECTOR CURRENT   IC (mA) hFE - IC RN2105MFV 1000 Ta = 100°C -25 100 EMITTER COMMON VCE = -5 V ...

Page 6

... VCE(sat RN2101MFV -1 COMMON EMITTER 100°C -0.1 25 -25 -0.01 -1 -10 COLLECTOR CURRENT   IC (mA) VCE(sat RN2103MFV -1 COMMON EMITTER -0 100°C 25 -25 -0.01 -1 -10 COLLECTOR CURRENT   IC (mA) VCE(sat RN2105MFV -1 COMMON EMITTER -0 100°C 25 -25 -0.01 -1 -10 COLLECTOR CURRENT   IC (mA) RN2101MFV∼ ...

Page 7

... Type Name Marking RN2101MFV RN2102MFV RN2103MFV RN2104MFV RN2105MFV RN2106MFV RN2101MFV∼RN2106MFV 7 2010-04-06 ...

Page 8

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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