PBSS5540X /T3 NXP Semiconductors, PBSS5540X /T3 Datasheet
PBSS5540X /T3
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PBSS5540X /T3 Summary of contents
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DATA SHEET dbook, halfpage PBSS5540X PNP low V Product data sheet Supersedes data of 2004 Jan 15 DISCRETE SEMICONDUCTORS M3D109 (BISS) transistor CEsat 2004 Nov 04 ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat FEATURES • Low collector-emitter saturation voltage V • High collector current capability: I • High efficiency leading to less heat generation. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I peak collector current CM I repetitive peak collector current CRP I collector current (DC) ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat 1600 P (1) tot (mW) 1200 (2) 800 (3) 400 0 − 100 2 (1) FR4 PCB mounting pad for collector. 2 (2) FR4 PCB mounting pad for collector. (3) FR4 PCB; standard footprint. Fig.2 Power derating curves. ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th(j-a) ambient R thermal resistance from junction to th(j-s) soldering point Notes ≤ 10 ms; δ ≤ 0.2. 1. Pulse test Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat (K/W) ( (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 (10) −1 10 −5 − Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm (1) δ (3) δ = 0.5. (2) δ = 0.75. (4) δ = 0.33. Fig.4 Transient thermal impedance as a function of pulse time; typical values. ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation BEsat voltage V base-emitter turn-on voltage ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat − (1) (A) (2) −6 (3) (4) −4 (5) −2 0 −0.5 − −11 mA. = −44 mA. ( −22 mA. = −55 mA. ( −33 mA. ( Fig.6 Collector current as a function of collector-emitter voltage; typical values. 1000 ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat −1 V CEsat (V) −1 −10 (2) −2 −10 −3 −10 −1 −10 −1 −10 − 20 100 ° °C. (1) T (2) T amb amb Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat Reference mounting conditions 2.5 mm 0.5 mm 3.96 mm Fig.14 FR4, standard footprint 2.5 mm 0.5 mm 3.96 mm 001aaa235 Fig.16 FR4, mounting pad for collector 6 cm 2004 Nov 04 handbook, halfpage 1.6 mm 001aaa234 ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Nov ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...